As electrification accelerates across energy systems, transport and industry, pressure is building on power electronics. These components, which control, convert and manage electrical power, are expected to deliver higher performance and efficiency at the same time. Meeting those demands increasingly depends not only on design, but on access to advanced materials and development capability.
Against this backdrop, RISE is establishing a new pilot line for silicon carbide (SiC) epitaxy at Electrum in Kista. The investment adds concrete materials capability at a critical point in the semiconductor value chain, supporting the development of power electronics for more demanding operating conditions.
Building power electronics from the materials up
The pilot line is focused on silicon carbide epitaxy, a process in which a crystalline layer is grown on a substrate with the same crystal structure. In practice, this makes it possible to develop customised SiC layers for power semiconductor components designed to operate under demanding conditions.
Silicon carbide is used in applications where efficiency, reliability and performance are critical. This includes electricity grids, transport systems, industrial applications, electronics production and defence — areas where components are exposed to high voltages, temperatures and long operating cycles.
Rather than focusing on a single step in the value chain, the pilot line brings together several parts of the development process. Materials expertise is combined with work on power semiconductor design, characterisation, packaging and integration, linking material properties more closely with how components are intended to perform in real systems.
“With the new team, we will combine cutting-edge SiC materials development expertise with power semiconductor design, characterisation, packaging and integration,” says Björn Samel, Vice President at the Smart Hardware Department at RISE.
Why silicon carbide matters for Sweden and Europe
Silicon carbide is not only relevant at the component level. As a key material in power electronics, it is closely linked to Sweden’s and the EU’s long-term ambitions to strengthen technological sovereignty, secure supply capacity and support innovation within the semiconductor sector.
In that context, the SiC epitaxy pilot line in Kista strengthens Sweden’s ability to build competence and participate in advanced semiconductor supply chains in a globally strategic field. By adding capability at an upstream stage of the value chain, the investment supports a stronger domestic role in the development of critical semiconductor technologies.
“Innovative power semiconductors are essential for a sustainable, competitive, digitalised and electrified society,” Samel says. “By developing the next generation of SiC technology, we can strengthen technological capability in both Sweden and Europe and create conditions for long-term growth.”
Part of an established research environment
The pilot line will be integrated into RISE’s existing structure, connecting it to ongoing research programmes and industry collaborations. This creates a link between long-term research and more application-oriented development, allowing work on materials and components to evolve over time.
Placed in Kista, the capability becomes part of an environment where technical infrastructure, applied research and industry already intersect. Within that environment, RISE is a partner of Semiconductor Arena, run together with Kista Science City, KTH and Sting, and co-funded by the European Union and Region Stockholm and. Here, the pilot line adds a concrete resource for continued development and testing, supporting work that moves between research and application as needs change.
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